Electrical and Raman Studies of Bilayer Mg/Co and Mg/MnThin Film Metal Hydrides
نویسندگان
چکیده
Bilayer Mg/Co and Mg/Mn (700nm) thin films were prepared using thermal evaporation method at pressure10 torr at room temperature. The films were rapid thermal annealed (RTA) using halogen lamp to get a homogeneous structure of thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure from 10 to 40 psi of H2 for thirty minutes. The conductivity has been found to be decreased with increasing pressure of hydrogenation and also intensity of Raman peaks is decreased. I-V characteristics and Raman spectroscopy of annealed hydrogenated thin films have been studied to find out the effect of hydrogenation. bilayers, annealing, hydrogenation, electric and raman studies.
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